Silicon nanowires synthesis for chemical sensor applications
نویسندگان
چکیده
منابع مشابه
Silicon Nanowires: Fabrication and Applications
Due to the high surface to volume silicon ratio and unique quasi onedimensional electronic structure, silicon nanowire based devices have properties that can outperform their traditional counterparts in many ways. To fabricate silicon nanowires, in principle there are a variety of different approaches. These can be classified into top-down and bottom-up methods. The choice of fabrication method...
متن کاملPolysilicon Nanowires for chemical sensing applications
Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location ...
متن کاملMoS2-wrapped silicon nanowires for photoelectro- chemical water reduction
1 Department of Chemistry, University of California, Berkeley, CA 94720, USA 2 Department of Chemical Engineering, University of California, Berkeley, CA 94720, USA 3 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA 4 Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA † Present address: Department of Mater...
متن کاملSub-diffraction Laser Synthesis of Silicon Nanowires
We demonstrate synthesis of silicon nanowires of tens of nanometers via laser induced chemical vapor deposition. These nanowires with diameters as small as 60 nm are produced by the interference between incident laser radiation and surface scattered radiation within a diffraction limited spot, which causes spatially confined, periodic heating needed for high resolution chemical vapor deposition...
متن کاملA Silicon-Polymer Heterostructure for Sensor Applications
We report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin lms 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at 1.0 Volt bias. The devices are very sensitive to -radiation up ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Procedia Engineering
سال: 2010
ISSN: 1877-7058
DOI: 10.1016/j.proeng.2010.09.120